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SMD Type
Silicon PNP Epitaxial Planar Type 2SB935
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -40 -20 -5 -10 -15 1.3 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-base cutoff curent Emitter-base cutoff current Collector-emitter voltage Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE Testconditons VCB = -40 V,IE = 0 VEB = -5 V, IC = 0 IC = -10mA, IB = 0 VCE = -2 V, IC = -2 A VCE = -2 V, IC = -0.1 A VCE(sat) IC = -7 A, IB = -0.23 A VBE(sat) IC = -7 A, IB = -0.23 A fT Cob ton tstg tf IC = -2 A,IB1 = -66 mA,IB2 = 66 mA VCE = -10 V, IE = -0.5 A , f = 10 MHz VCB = -10V , IE = 0 , f = 1.0MHz 150 200 0.1 0.5 0.1 -20 90 45 -1.5 -0.6 V V MHz pF is is is 260 Min Typ Max -50 -50 Unit iA iA V V
hFE Classification
Rank hFE Q 90 180 P 130 260
3.80
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